Characteristics of buried-channel pMOS devices with shallow counter-doped layers fabricated using channel preamorphization

✍ Scribed by Miyake, M.; Okazaki, Y.; Kobayashi, T.

• Book ID: 114536446
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 682 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.485659