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Subpicosecond carrier trapping in high-defect-density amorphous Si and GaAs

✍ Scribed by J. Kuhl; E. O. Göbel; Th. Pfeiffer; A. Jonietz

Book ID
104840290
Publisher
Springer
Year
1984
Tongue
English
Weight
527 KB
Volume
34
Category
Article
ISSN
1432-0630

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Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre