Submonolayer coverage of Ga and B adatoms on a Ge(111) surface
โ Scribed by C. Cheng; K. Kunc
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 230 KB
- Volume
- 65-66
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A
In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was
The structure of adsorbed N20 on a Pt ( 111) surface and its photochemistry at 193 nm have been studied by low energy electron diffraction and temperature-programmed desorption. NsO adsorbs on the Pt( 111) surface molecularly at 82 K and is not dissociated thermally. The observed LEED pattern indica