✦ LIBER ✦

Subband dependent mobilities and carrier saturation mechanisms in thin Si doping layers in GaAs in the high density limit

✍ Scribed by Skuras, E; Kumar, R; Williams, R L; Strading, R A; Dmochowski, J E; Johnson, E A; Mackinnon, A; Harris, J J; Beall, R B; Skierbeszewski, C

Book ID: 111901851
Publisher: Institute of Physics
Year: 1991
Tongue: English
Weight: 746 KB
Volume: 6
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/6/6/023

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

-doped Si:P and Ge:P layers in the high-

-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

✍ Smith, J. S.; Cole, J. H.; Russo, S. P. 📂 Article 📅 2014 🏛 The American Physical Society 🌐 English ⚖ 762 KB

The dependence of the carrier density an

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

✍ M Jung; T.W Kim; D.U Lee; D.C Choo; K.H Yoo; D.L Kim; M.D Kim; H Lim 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 234 KB