𝔖 Bobbio Scriptorium
✦   LIBER   ✦

-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

✍ Scribed by Smith, J. S.; Cole, J. H.; Russo, S. P.

Book ID
121879747
Publisher
The American Physical Society
Year
2014
Tongue
English
Weight
762 KB
Volume
89
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Exchange Energy of a Hole Gas and the Th
Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type Ξ΄-Doped Quantum Wells in Si and GaAs
✍ L.M. Gaggero-Sager πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 133 KB πŸ‘ 2 views

We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro Β¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density