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Sub-100-nm p+-n shallow junctions fabricated by group III dual ion implantation and rapid thermal annealing

✍ Scribed by Lin, C-M.; Steckl, A. J.; Chow, T. P.

Book ID: 120067449
Publisher: American Institute of Physics
Year: 1989
Tongue: English
Weight: 629 KB
Volume: 54
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.101491

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