Study on the device characteristics of a quasi-SOI power MOSFET fabricated by reversed silicon wafer direct bonding

✍ Scribed by Matsumoto, S.; Hiraoka, Y.; Ishiyama, T.; Sakai, T.; Yachi, T.; Yamada, I.; Ito, A.; Arimoto, Y.

• Book ID: 114537421
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 150 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.711359