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A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding

✍ Scribed by Matsumoto, S.; Hiraoka, Y.; Sakai, T.; Yachi, T.; Ishiyama, T.; Kosugi, T.; Kamitsuna, H.; Muraguchi, M.

No coin nor oath required. For personal study only.

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