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Study on precipitations of fluorine-doped silicon oxide

✍ Scribed by Jun Wu; Ying-Lang Wang; Chuan-Pu Liu; Shih-Chieh Chang; Cheng-Tzu Kuo; Chyung Ay

Book ID
113936420
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
623 KB
Volume
447-448
Category
Article
ISSN
0040-6090

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## Abstract Based on Fourier transform infrared (FTIR) spectroscopy and bulk micro‐defect investigations, in relation to earlier results of other groups, we suggest the following model for oxide precipitate nucleation in N‐doped silicon. Around 600 Β°C a nucleation maximum exists where oxide precipi