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Study on hydrogenation of polysilicon thin film transistors by ion implantation

โœ Scribed by Min Cao; Tiemin Zhao; Saraswat, K.C.; Plummer, J.D.

Book ID
114536091
Publisher
IEEE
Year
1995
Tongue
English
Weight
656 KB
Volume
42
Category
Article
ISSN
0018-9383

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Characterization of polysilicon thin-fil
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โœ M.S. Shieh; Y.J. Lin; C.M. Yu; T.F. Lei ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 223 KB

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain