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Study of the growth of fullerene-carbonized epitaxial SiC thin films by synchrotron radiation

✍ Scribed by S. Geier; M. Zeitler; K. Helming; M. Philip; S. Henke; B. Stritzker; B. Rauschenbach


Book ID
106023085
Publisher
Springer
Year
1997
Tongue
English
Weight
251 KB
Volume
64
Category
Article
ISSN
1432-0630

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The crystal structure of In 2 S 3 thin films obtained by the chemical vapor deposition method from the volatile complex compounds indium(III) isopropyl xanthate and indium(III) diethyl dithiocarbonate was studied by synchrotron radiation diffraction. High photon beam intensity (3 Ψ‹ 10 10 photons/mm