✦ LIBER ✦

Study of silicon carbide for X-ray detection and spectroscopy

✍ Scribed by Bertuccio, G.; Casiraghi, R.

Book ID: 120520151
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 661 KB
Volume: 50
Category: Article
ISSN: 0018-9499
DOI: 10.1109/TNS.2003.807855

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Epitaxial silicon carbide for X-ray dete

Epitaxial silicon carbide for X-ray detection

✍ Bertuccio, G.; Casiraghi, R.; Nava, F. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 58 KB

X-Ray study of silicon carbide fibers

✍ G. P. Grinevich; N. I. Zakharenko; V. S. Kopan'; P. M. Silenko 📂 Article 📅 1990 🏛 Springer 🌐 English ⚖ 325 KB

Oxidation kinetics of silicon carbide wh

Oxidation kinetics of silicon carbide whiskers studied by X-ray photoelectron spectroscopy

✍ Pu Sen Wang; S. M. Hsu; T. N. Wittberg 📂 Article 📅 1991 🏛 Springer 🌐 English ⚖ 270 KB

X-ray absorption spectroscopy study at t

X-ray absorption spectroscopy study at the Si K-edge of tungsten carbide–silicon carbide thin films

✍ J.E. Krzanowski; S. Palacín; A. Gutiérrez; F. Schäfers; M. Mertin; J.L. Endrino; 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 874 KB

X-Ray studies of graphite formed by deco

X-Ray studies of graphite formed by decomposing silicon carbide

✍ D.V. Badami 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 786 KB

The structural changes which occur when single crystals of a silicon carbide (6H) are heated in vacua, have been studied by using X-ray diffraction methods. The crystals were heated in an induction furnace for an hour to N 2280°C. This resulted in the formation of pseudomorphs which retained the mor

Surface oxidation of silicon carbide pla

Surface oxidation of silicon carbide platelets as studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy

✍ Pu Sen Wang; Subhas G. Malghan; Stephen M. Hsu; T. N. Wittberg 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 364 KB

## Abstract X‐ray photoelectron spectroscopy (XPS) and Bremsstrahlung‐excited Auger electron spectroscopy (XAES) were used to study the surface composition and oxidation of silicon carbide platelets which had been heated in air at 500–800° C. The surface oxide thickness for each heating time and te