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Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model

✍ Scribed by Rao, Rathnamala; DasGupta, Nandita; DasGupta, Amitava

Book ID: 121529127
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 255 KB
Volume: 10
Category: Article
ISSN: 1530-4388
DOI: 10.1109/TDMR.2010.2044180

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