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[IEEE 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO) - Portland, OR, USA (2011.08.15-2011.08.18)] 2011 11th IEEE International Conference on Nanotechnology - Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants

✍ Scribed by Ashraf, Nabil; Vasileska, Dragica; Wirth, Gilson; Purushothaman, Srinivasan


Book ID
126684372
Publisher
IEEE
Year
2011
Weight
108 KB
Category
Article
ISBN
1457715155

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