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Study of porous silicon structure by Raman scattering

✍ Scribed by Dariani, R.S.; Ahmadi, Z.

Book ID
121353262
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
533 KB
Volume
124
Category
Article
ISSN
0030-4026

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## Abstract In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built‐in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shif