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Study of nanocrystal memory integration in a Flash-like NOR device

✍ Scribed by Cosimo Gerardi; Salvatore Lombardo; Giuseppe Ammendola; Giovanni Costa; Valentina Ancarani; Domenico Mello; Stella Giuffrida; Maria Cristina Plantamura


Book ID
108210686
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
360 KB
Volume
47
Category
Article
ISSN
0026-2714

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## Abstract In this work, we have fabricated silicon nanocrystal (nc‐Si) based Flash memories with two different tunnel‐oxide thicknesses (3 and 7 nm). The nc‐Si is synthesized with very‐low energy ion implantation and subsequent thermal annealing. The endurance and retention characteristics of the