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A device simulation of the BBT effect in flash memory cells and implications for the development of high-reliability memory cells

✍ Scribed by Takahisa Hayashi; Koichi Fukuda; Morifumi Ohno; Kenji Nishi; Akio Kita

Publisher: John Wiley and Sons
Year: 1996
Tongue: English
Weight: 458 KB
Volume: 79
Category: Article
ISSN: 8756-663X
DOI: 10.1002/ecjb.4420791107

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