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Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling

✍ Scribed by N. Hayashi; R. Suzuki; H. Watanabe; I. Sakamoto; N. Kobayashi; T. Mikado; T. Yamazaki; K. Kuriyama

No coin nor oath required. For personal study only.

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Crystallization of SiSn and SiSnC layers

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Ion-beam-induced epitaxial crystallizati

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A Study of Vacancy-Type Defects in B + -

✍ Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto 📂 Article 📅 1989 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 692 KB