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Study of InGaAs/GaAs metal-insulator-semiconductor-like heterostructure field-effect transistor

โœ Scribed by Cheng-Zu Wu; Lih-Wen Laih; Wen-Chau Liu


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
463 KB
Volume
39
Category
Article
ISSN
0038-1101

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Analytical performance evaluation of AlG
โœ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cutโ€off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position