The content of hydrogen in Pd/n-Si, Pd/p-Si, and Pd/p-GaAs devices have been measured, both in the semiconducting substrates and the palladium thin film deposited on p-type Si, n-type Si and p-type GaAs, by ERDA (Elastic Recoil Detection Analysis) using 55 Mev Si ions. The samples were hydrogenated
Study of hydrogen in DLC film by ERDA with 58Ni ions
β Scribed by D.K. Avasthi; D Kabiraj; Jaipal; G.K. Mehta; H.C. Barshilia; Somna Sah; B.R. Mehta; V.D. Vankar
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 443 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A special cell was constructed for studying the interaction of hydrogen with materials. It enabled exposure of samples to a neutral hydrogen atmosphere and simultaneous concentration depth profiling of H and D. The concentration of individual hydrogen isotopes was measured by elastic recoil detectio
## Abstract RuCl~3~ further catalyzes the oxidation of iodide ion by K~3~Fe(CN)~6~, already catalyzed by hydrogen ions. The rate of reaction, when catalyzed only by hydrogen ions, was separated graphically from the rate when both Ru(III) and H^+^ ions catalyzed the reaction. Reactions studied separ
The use of hydrogen peroxide in addition to ferrous and ferric salts has been shown an effective method in the decoloration of indigocarmine (IDS), Indigo-5,5Π-disulfonic acid disodium salt. The kinetic experiments control have been carried out by means of a conventional spectrophotometric techniqu