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Study of epitaxial growth of diamond-like semiconductor films by computer simulation

โœ Scribed by Aleksandrov, L. N. ;Kogan, A. N. ;Dyakonova, V. I. ;Trostina, N. P.

Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
448 KB
Volume
58
Category
Article
ISSN
0031-8965

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Epitaxial growth of diamond-like films o
Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
โœ J.A. Martin-Gago; L. Vazquez; P. Bernard; S. Ferrer; F. Comin ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

Carbon films of few atomic layers in thickness were grown on Si(100) substrates in an ultrahigh vacuum environment by pulsed-laser evaporation of graphite targets. Auger studies of the growth shows it to be layer by layer. It was found that the first two layers deposited, which wet the silicon surfa