Study of electron-beam evaporated Sn-doped In2O3 films
β Scribed by S.M.A. Durrani; E.E. Khawaja; J. Shirokoff; M.A. Dams; G.D. Khattak; M.A. Salim; M.S. Hussain
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 529 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0927-0248
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β¦ Synopsis
Electron beam evaporated Sn-doped In20 3 films have been prepared from the starting material with composition of (1 -x) In203 --x SnO 2, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film ([Sn]/[In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In = 0.06 --0.09. These results compare well with those reported in the literature for Sn-doped In20 3 films, prepared by pyrolitic (spray) method.
π SIMILAR VOLUMES
In this work, temperature-dependent measurements of individual In 2 O 3 nanowires were used in order to study the character of the electron transport in these samples. It was found that at low temperatures, the transport was dominated by the electron-electron scattering events. Additionally, the res
## Abstract The solidβstate reaction method was used to prepare tablets of (V~2~O~5~)~100β__x__~ (Al~2~O~3~)~__x__~ with __x__β=β5, 10, 15, 20 wt. %. Thin films of Al~2~O~3~βdoped V~2~O~5~ were deposited onto glass substrates using an electronβbeam evaporation technique. The influence of doping and