Electron beam evaporated Sn-doped In20 3 films have been prepared from the starting material with composition of (1 -x) In203 --x SnO 2, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were
Electron–electron scattering in Sn doped In2O3 nanowires
✍ Scribed by Adenilson J. Chiquito; Alexandre J.C. Lanfredi; Edson R. Leite
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 397 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
In this work, temperature-dependent measurements of individual In 2 O 3 nanowires were used in order to study the character of the electron transport in these samples. It was found that at low temperatures, the transport was dominated by the electron-electron scattering events. Additionally, the results allowed us to calculate the characteristic lengths of the system, confirming its one-dimensional character for electron transport.
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