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Study of Electrical Stress Effect on SiGe HBT Low-Noise Amplifier Performance by Simulation

✍ Scribed by Yu, Chuanzhao; Yuan, J. S.; Shen, John; Xiao, Enjun

Book ID: 120686727
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 881 KB
Volume: 6
Category: Article
ISSN: 1530-4388
DOI: 10.1109/TDMR.2006.887464

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