The Effect of Geometry on the Noise Characterization of SiGe HBTs and Optimized Device Sizes for the Design of Low-Noise Amplifiers

✍ Scribed by Lin, C.-H.; Su, Y.-K.; Juang, Y.-Z.; Chuang, R.W.; Chang, S.-J.; Chen, J.F.; Tu, C.-H.

• Book ID: 120651481
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 650 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9480
• DOI: 10.1109/TMTT.2004.834179