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Study of early stages of diamond nucleation and growth by combined use of SEM and AES techniques

✍ Scribed by L. Ferrari; E. Cappelli; A. Cricenti; S. Selci; R. Polini; G. Chiarotti


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
510 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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We investigated, by atomic force microscopy (AFM), the effect of the V/III ratio on the surface morphologies of GaN epilayers during the early stage of high-temperature (HT) GaN growth. The epilayers were grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition (LP-MOCVD)