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A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

✍ Scribed by L. Pasemann; W. Hergert


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
425 KB
Volume
19
Category
Article
ISSN
0304-3991

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## Abstract The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two