A theoretical interpretation of the elec
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Dr. A. Ourmazd
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Article
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1981
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John Wiley and Sons
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English
β 493 KB
## Abstract The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture crossβsection for minority carriers, which determine electrical recombination properties of dislocations. A two