Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching

✍ Scribed by Chih-Chiang Kao; H.W Huang; J.Y Tsai; C.C Yu; C.F Lin; H.C Kuo; S.C Wang

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 344 KB
• Volume: 107
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2003.11.023