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Study of defects in LEC-grown undoped SI-GaAs by thermally stimulated current spectroscopy

โœ Scribed by Zhaoqiang Fang; Lei Shan; T.E. Schlesinger; A.G. Milnes


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
1018 KB
Volume
5
Category
Article
ISSN
0921-5107

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Thermally stimulated current study of el
โœ K Kuriyama; Jun Takahashi; M Okada; M Uchida ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 142 KB

Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5 ยฃ 10 15 to 2.5 ยฃ 10 15 cm 23 , which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) metho