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Study of capacitance in hydrogenated amorphous silicon phototransistors for imaging arrays

โœ Scribed by M. Tucci; D. Caputo

Book ID
116667830
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
268 KB
Volume
338-340
Category
Article
ISSN
0022-3093

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Junction capacitance studies of deep def
Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon
โœ J.D. Cohen; A.V. Gelatos; K.K. Mahavadi; K. Zellama ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 630 KB

Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,