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Study and applications of plasma-modified Si and porous Si surfaces

✍ Scribed by N. Gabouze; N. Benzekkour; Be Mahmoudi; S. Belhousse; H. Cheraga; N. Ghellai

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
716 KB
Volume
254
Category
Article
ISSN
0169-4332

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It has been shown that rutile-rich TiO 2 films with excellent electrical and chemical characteristics can be prepared by deposition on Si surfaces at low temperature, using ionized oxygen gas with an admixture of He gas. The Si surfaces were cleaned by etching with Ar gas before film deposition. We