Plasma cleaning of Si surfaces for TiO2 film deposition

✍ Scribed by Akira Shibata; Kazumaro Kita; Kunio Okimura

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 155 KB
• Volume: 83
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/1520-6432(200007)83:7<9::aid-ecjb2>3.0.co;2-t

✦ Synopsis

It has been shown that rutile-rich TiO 2 films with excellent electrical and chemical characteristics can be prepared by deposition on Si surfaces at low temperature, using ionized oxygen gas with an admixture of He gas. The Si surfaces were cleaned by etching with Ar gas before film deposition. We investigated whether the same rutile-rich TiO 2 films could be obtained on Si surfaces cleaned by Ar etching if the substrates were cleaned with a gas mixture consisting of H 2 or CF 4 instead of Ar alone. Etching with only H 2 added led to the growth of anatase TiO 2 films, but etching with an Ar + H 2 + CF 4 mixture for the optimum etching time led to the growth of rutile films. This result is attributed to interaction of positively charged SiH or negatively charged SiF with positively charged O 2 ion.