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Studies on the process of Bi12MO20(M=Ti, Ge, Si) formation from oxides

✍ Scribed by G. S. Suleimenova; V. M. Skorikov


Book ID
105424755
Publisher
Springer Netherlands
Year
1992
Tongue
English
Weight
306 KB
Volume
38
Category
Article
ISSN
0022-5215

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The atomic and electronic structures of Ge dimers adsorbed on top of a Si(100) flat surface has been investigated by first-principles molecular dynamics method. Four high-symmetry configurations have been considered and thoroughly relaxed. The most stable configuration for Ge dimers is found to be o