Structures and Physical Properties of Films Deposited by Simultaneous DC Sputtering of ZnO and In2O3 or ITO Targets

✍ Scribed by Toshihiro Moriga; Takashi Okamoto; Kazunori Hiruta; Azumi Fujiwara; Ichiro Nakabayashi; Kikuo Tominaga

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 369 KB
• Volume: 155
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1006/jssc.2000.8919

✦ Synopsis

Oxide 5lms in the ZnO+In 2 O 3 and ZnO+tin-doped indium oxide (ITO) systems were deposited by simultaneous dc sputtering of ZnO and In 2 O 3 or ITO facing targets at substrate temperatures from room temperature up to 3003C. The ratio of the ZnO target current to the sum of both the currents was varied. The bixbyite-type In 2 O 3 phase, an amorphous phase, the homologous Zn k In 2 O k؉3 phases, and the wurtzite-type ZnO phase were found in this order with increasing values. Characteristic trends were observed for -dependent electrical properties within the respective phase groups, regardless of the substrate temperatures. The minimum resistivity of 2.3؋10 ؊4 cm and the maximum carrier concentration of 1.2؋10 21 cm ؊3 were obtained for the amorphous 5lm deposited at 1503C and ‫؍‬ 0.20, having the atomic ratio of [Zn]/([In]؉[Zn]) ‫؍‬ 0.22. Sn doping was e4ective in improving the electrical properties only in the region where the bixbyite-type In 2 O 3 phase appeared and was less e4ective in the amorphous, homologous Zn k In 2 O k؉3 and wurtzite-type ZnO regions.