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Structures and energetics of defects: a comparative study of 3C- and 4H-SiC

✍ Scribed by F. Gao; M. Posselt; V. Belko; Y. Zhang; W.J. Weber


Book ID
113822764
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
327 KB
Volume
218
Category
Article
ISSN
0168-583X

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro