We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF(48wt.\%): \(\mathrm{H}_{2} \mathrm{O}=1: 1\). After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the \(476.5 \mathrm{~nm}\) line, with a power of \(20 \mat
Structured luminescent silicon produced with laser-assisted etching
β Scribed by A. V. Starovoitov; S. C. Bayliss
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 955 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0268-2605
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β¦ Synopsis
We present an investigation into a new technique for producing luminescent porous silicon with controlled lateral microstructure. The process is based on the effect of laser-assisted stain etching of silicon with hydrofluoric acid solution. With the further goal of preparing two-dimensional periodical arrays of luminescent microdots, we studied the accuracy of the technique by etching single submillimetre structures with a lowpower laser. The size and exact position of the etched area are controlled by laser focusing and movement, respectively, with submillimetre accuracy. Samples exhibit orange luminescence when illuminated with UV or blue light.
We have studied the dependence of the efficiency of the luminescence, the structure and the rate of etching on parameters such as the HF concentration, the intensity and wavelength of illumination and the doping level of the silicon wafer. Optimization of the process parameters, and consistency with assumed mechanisms of luminescence and etching process, are discussed.
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