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Structure of the photoluminescence spectra in the vicinity of the lines D1 and D2 in plastically deformed Si

✍ Scribed by Shevchenko, S. A. ;Izotov, A. N.

Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
209 KB
Volume
148
Category
Article
ISSN
0031-8965

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## Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri-and tetra-selfinterstitial defects. I