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Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si

✍ Scribed by R. Jones; B.J. Coomer; J.P. Goss; S. Öberg; P.R. Briddon


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
109 KB
Volume
222
Category
Article
ISSN
0370-1972

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✦ Synopsis


Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri-and tetra-selfinterstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.