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On the angular dependence of gaps in 1-D Si/SiO2 periodic structures

✍ Scribed by Herman Högström; Carl G. Ribbing


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
770 KB
Volume
271
Category
Article
ISSN
0030-4018

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The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of the metal-ferroelectricinsulator-semiconductor (Au/Bi 4 Ti 3 O 12 /SiO 2 /n-Si) structures (MFIS) were investigated by considering series resistance (R s ) and surface state effects in the frequency