## Abstract The goal of the research presented here is to apply a global analysis of an inductively heated Czochralski furnace for a real sapphire crystal growth system and predict the characteristics of the temperature and flow fields in the system. To do it, for the beginning stage of a sapphire
β¦ LIBER β¦
Structure of temperature and velocity fields in the Si melt of a Czochralksi crystal growth system
β Scribed by Kyung-Woo Yi; Vicki B. Booker; Minoru Eguchi; Toshiyuki Shyo; Koichi Kakimoto
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 809 KB
- Volume
- 156
- Category
- Article
- ISSN
- 0022-0248
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