Structure investigation of photo-CVD silicon nitride films by IR and ESR spectroscopy
✍ Scribed by GM Nikolić
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 185 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Amorphous nitrided galloaluminophosphates 99AlGaPON:: catalysts with nitrogen contents varying from 0 to 23.3 wt% N were obtained by nitriding an Al 0.5 Ga 0.5 PO 4 precursor under ammonia 6ow at 7503C in a tubular furnace. The structural changes induced by this treatment were investigated by electr
In a series of two papers we describe the effect of argon dilution of the nitrogen passed through the RF discharge region on the plasma composition, growth rate and some characteristics of silicon nitride films deposited by remove PECVD. In this part we report the results of an emission spectroscopi