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Structure changes by annealing and doping of a-Si:H prepared at high deposition rate studied by means of positron annihilation

โœ Scribed by Hiroyuki Nasu; Masao Watanabe; Kiyoshi Shizuma; Seigo Makida; Masato Ueda; Takeshi Imura; Yukio Osaka; Hiromi Hasai


Book ID
119443948
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
354 KB
Volume
95-96
Category
Article
ISSN
0022-3093

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