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Structure and features of the surface morphology ofA4B6chalcogenide epitaxial films

✍ Scribed by I. R. Nuriyev


Book ID
111438256
Publisher
SP MAIK Nauka/Interperiodica
Year
2009
Tongue
English
Weight
148 KB
Volume
54
Category
Article
ISSN
1063-7745

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The gas-phase epitaxy of AlN on saphire substrates in the system Al-HCl-NH,-Ar was investigated. The uniformity and structural perfection of the layers were shown to be determined by gas dynamics in the growth zone. The growth rate of A1N-layer is proportional to AlCl concentration in the growth zon