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Structure and electrical properties of AlN films prepared on PZT films by the DC reactive magnetron sputtering

✍ Scribed by Meng, Xiangqin; Yang, Chengtao; Yang, Jiancang


Book ID
121564539
Publisher
The Korean Institute of Metals and Materials
Year
2014
Tongue
English
Weight
418 KB
Volume
10
Category
Article
ISSN
1738-8090

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Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp