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Structurally relaxed models of the Si(001)–SiO2 interface

✍ Scribed by Pasquarello, Alfredo; Hybertsen, Mark S.; Car, Roberto


Book ID
121647099
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
241 KB
Volume
68
Category
Article
ISSN
0003-6951

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The peculiarities of Si/SiO2 interfaces
✍ T. Kryshtab; G. Gómez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp