Structural study of TiO2 thin films by micro-Raman spectroscopy

✍ Scribed by Niilisk, Ahti ;Moppel, Mart ;Pärs, Martti ;Sildos, Ilmo ;Jantson, Taavi ;Avarmaa, Tea ;Jaaniso, Raivo ;Aarik, Jaan

• Book ID: 107385653
• Publisher: Walter de Gruyter GmbH
• Year: 2006
• Tongue: English
• Weight: 269 KB
• Volume: 4
• Category: Article
• ISSN: 2391-5471
• DOI: 10.1007/s11534-005-0009-3

✦ Synopsis

The Raman spectroscopy method was used for structural characterization of TiO 2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125-425 • C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 • C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 • C and retained this phase even after annealing at 900 • C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 • C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.