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Structural instability of 4H–SiC polytype induced by n-type doping

✍ Scribed by Liu, J. Q.; Chung, H. J.; Kuhr, T.; Li, Q.; Skowronski, M.


Book ID
121699237
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
279 KB
Volume
80
Category
Article
ISSN
0003-6951

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## Abstract The magnetic properties of conduction electrons (CE) in heavily doped n‐type 4H SiC have been studied with electron paramagnetic resonance (EPR) in the temperature interval from 7 to 140 K. An EPR line with “Dyson lineshape” was observed in 4H SiC wafers with (__N__~D~–__N__~A~) ≈ 10^19