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N-type doping of 4H-SiC with phosphorus Co-implanted with C or Si

✍ Scribed by L. Zhu; Z. Li; T. P. Chow


Book ID
107452639
Publisher
Springer US
Year
2001
Tongue
English
Weight
340 KB
Volume
30
Category
Article
ISSN
0361-5235

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MOS capacitors obtained by wet oxidation
✍ A. Poggi; F. Moscatelli; Y. Hijikata; S. Solmi; R. Nipoti πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 196 KB

The manufacture process and the electrical characterization of MOS devices fabricated by wet oxidation of N + implanted n-type 4H-SiC are here presented. Different implantation fluence and energy values were used with the aims to study the effect of the N concentration both at the SiO 2 /SiC interfa