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Doping of n-type 6HâSiC and 4HâSiC with defects created with a proton beam

✍ Scribed by Lebedev, A. A.; Veinger, A. I.; Davydov, D. V.; Kozlovski, V. V.; Savkina, N. S.; Strelâchuk, A. M.

No coin nor oath required. For personal study only.

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Doping of n-type 6HâSiC and 4HâSiC with defects created with a proton beam