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Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

✍ Scribed by Gael Gautier, Frederic Cayrel, Marie Capelle, Jérome Billoué, Xi Song, Jean-Francois Michaud


Book ID
119906001
Publisher
Springer-Verlag
Year
2012
Tongue
English
Weight
904 KB
Volume
7
Category
Article
ISSN
1931-7573

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